Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)

This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects both vertical tunneling and lateral phenomena to improve device performance. Attributes ETL, its thickness (tepi) doping concentration (Nepi) are varied their impact on electrical parameters such as transfer characteristic, output performance, subthreshold swing (SS), threshold voltage (VT) is highlighted. It observed that tepi Nepi significantly influence different ETL TFET architecture.